Caratteristiche Tecniche:
• CL(IDD) 15 cycles
• Row Cycle Time (tRCmin) 45ns(min.)
• Refresh to Active/Refresh Command Time (tRFCmin) 260ns(min.)
• Row Active Time (tRASmin) 26.25ns(min.)
• Maximum Operating Power TBD W*
• UL Rating 94 V - 0
• Operating Temperature 0oC to +85oC
• Storage Temperature -55oC to +100oC
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Dual-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• Height 1.340” (34.04mm), w/heatsin